Infineon (BCR135E6327HTSA1) Bipolar Digital Transistor, NPN, 50V, 100mA

Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100mA, 10 kohm, 47 kohm, 0.21 (Ratio)

Product Overview
The BCR 135 E6327 is a NPN silicon digital Bipolar Transistor suitable for switching circuit, inverter and interface circuit driver circuit applications.
Built-in bias resistor (R1 = 10kR, R2 = 47kR)

Product Information
Digital Transistor Polarity: Single NPN
Collector Emitter Voltage V(br)ceo: 50V
Continuous Collector Current Ic: 100mA
Base Input Resistor R1: 10kohm
Base-Emitter Resistor R2: 47kohm
Resistor Ratio, R1 / R2: 0.21(Ratio)
RF Transistor Case: SOT-23
Transistor Mounting: Surface Mount
No. of Pins: 3 Pin
Product Range: –
Automotive Qualification Standard: AEC-Q101
MSL: MSL 1 – Unlimited

What’s in the box
5 x Infineon (BCR135E6327HTSA1) Bipolar Digital Transistors