Onsemi (FJP13009H2TU) Bipolar (BJT) Single Transistor, NPN, 400 V, 12 A

Product Overview
The FJP13009H2TU is a high voltage fast-switching NPN epitaxial planar Power Transistor. The FJP13009H2TU is available with multiple hFE bin classes for ease of design use. Designed for high speed switching applications and offers excellent power dissipation.
High voltage capability
High switching speed
700V Collector-base voltage
9V Emitter-base voltage
6A Base current

Product Information
Transistor Polarity: NPN
Collector Emitter Voltage V(br)ceo: 400V
Transition Frequency ft: 4MHz
Power Dissipation Pd: 100W
DC Collector Current: 12A
DC Current Gain hFE: 8hFE
Transistor Mounting: Through Hole
Transistor Case Style: TO-220
No. of Pins: 3Pins
Operating Temperature Max: 150°C
Product Range: –
Automotive Qualification Standard: –
MSL: –

What’s in the box
1 x Onsemi (FJP13009H2TU) Bipolar (BJT) Single Transistor