Onsemi (MJ11032G) Bipolar (BJT) Single Transistor, NPN, 120V, 50A

Product Overview
The MJ11032G is a NPN Darlington Power Transistor for use as output devices in complementary general purpose amplifier applications.
High DC current gain
Monolithic construction with built-in base-emitter shunt resistor

Product Information

Transistor Polarity: NPN
Collector Emitter Voltage V(br)ceo: 120V
Transition Frequency ft: –
Power Dissipation Pd: 300W
DC Collector Current: 50A
DC Current Gain hFE: 18000hFE
Transistor Mounting: Through Hole
Transistor Case Style: TO-204
No. of Pins: 2Pins
Operating Temperature Max: 200°C
Product Range: –
Automotive Qualification Standard: –
MSL: –

What’s in the box
1 x Onsemi (MJ11032G) Bipolar (BJT) Single Transistor