Onsemi (MJD127G) Bipolar (BJT) Single Transistor, PNP, 100 V, 8 A

Product Overview
The MJD127G is a 8A PNP bipolar power Darlington Transistor designed for general purpose amplifier and low speed switching applications. It is the surface-mount replacement for 2N6040 to 2N6045 series, TIP120 to TIP122 series and TIP125 to TIP127 series.
Lead formed for surface-mount applications in plastic sleeves
Monolithic construction with built-in base-emitter shunt resistors
Complementary pairs simplifies designs
AEC-Q101 qualified and PPAP capable

Product Information

Transistor Polarity: PNP
Collector Emitter Voltage V(br)ceo: 100V
DC Collector Current: 8A
Transition Frequency ft: –
Power Dissipation Pd: 1.75W
DC Current Gain hFE: 12hFE
Transistor Mounting: Surface Mount
Transistor Case Style: TO-252 (DPAK)
No. of Pins: 3Pins
Operating Temperature Max: 150°C
Product Range: –
Automotive Qualification Standard: AEC-Q101
MSL: MSL 1 – Unlimited

What’s in the box
1 x Onsemi (MJD127G) Bipolar (BJT) Single Transistor