Onsemi (MJE13007G) Bipolar (BJT) Single Transistor, NPN, 400 V, 8 A

Product Overview
The MJE13007G is a Silicon NPN Bipolar Power Transistor designed for high voltage and high speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220V switch mode applications such as switching regulators, inverters, motor controls, solenoid/relay drivers and deflection circuits.
SOA and switching applications
Collector-base voltage (Vcbo = 700V)
Emitter-base voltage (Vcbo = 9V)

Product Information
Transistor Polarity: NPN
Collector Emitter Voltage V(br)ceo: 400V
Transition Frequency ft: 14MHz
Power Dissipation Pd: 80W
DC Collector Current: 8A
DC Current Gain hFE: 4hFE
Transistor Mounting: Through Hole
Transistor Case Style: TO-220
No. of Pins: 3Pins
Operating Temperature Max: 150°C
Product Range: –
Automotive Qualification Standard: –
MSL: –

What’s in the box
1 x Onsemi (MJE13007G) Bipolar (BJT) Single Transistor